| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F16W63 |
|
N/a |
2000 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG6304 ,Dual P-Channel/ Digital FETElectrical Characteristics (T = 25 C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDG6304P ,Dual P-Channel, Digital FETJuly 1999 FDG6304P Dual P-Channel, Digital FET
FDG6306P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –0.6 A, –20 V. R = 420 mΩ @ V = –4.5 V ..
