Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F16L8-10CFN |
LATTICE |
N/a |
754 |
|
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 
FDG6302 ,Dual P-Channel/ Digital FETElectrical Characteristics (T = 25 C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
FDG6302P ,Dual P-Channel, Digital FETFeatures-25 V, -0.14 A continuous, -0.4 A peak.These dual P-Channel logic level enhancement mode ..
FDG6303 ,Dual N-Channel/ Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..