| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F16C27 |
|
N/a |
41 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR　
FDG6301N ,Dual N-Channel, Digital FETJuly 1999 FDG6301N Dual N-Channel, Digital FET
FDG6301N_F085 ,Dual N-Channel Digital FETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDG6302 ,Dual P-Channel/ Digital FETElectrical Characteristics (T = 25 C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
