Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F16B103 |
AB |
N/a |
50 |
|
|
F16B103 |
|
N/a |
25 |
|
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETApplications• Load switch• Battery protection• Power managementSD1 6D2 5GDPin 13 4DSC70-6oAbsolute ..
FDG410NZ ,20V Single N-Channel PowerTrench?MOSFETApplications HBM ESD protection level > 2 kV (Note 3) DC/DC converter High performance trench te ..
FDG6301N ,Dual N-Channel, Digital FETJuly 1999 FDG6301N Dual N-Channel, Digital FET