| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F16859BK |
|
N/a |
1852 |
 |
|
| F16859BK |
ICS |
N/a |
165 |
|
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETApplications• Load switch• Battery protection• Power managementSD1 6D2 5GDPin 13 4DSC70-6oAbsolute ..
FDG410NZ ,20V Single N-Channel PowerTrench?MOSFETApplications HBM ESD protection level > 2 kV (Note 3) DC/DC converter High performance trench te ..
