| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1628CYT |
SIS |
N/a |
165 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG329N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG329N
FDG329N ,20V N-Channel PowerTrench MOSFETFDG329NFDG329N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG361N ,N-Channel 100V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 100V specified MOSFETs are • 0.6 A, 100 V. R = 500 mΩ @ V = 10 V ..
