Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F161A |
TI|Texas Instruments |
N/a |
20 |
|
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
FDG329N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG329N
FDG329N ,20V N-Channel PowerTrench MOSFETFDG329NFDG329N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..