| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F160ZS105K250V |
|
N/a |
1800 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG327NZ ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.5 A, 20 V. R = 90 mΩ @ V = 4.5 V. DS(ON) GSs ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETApplications • Low gate charge • DC/DC converter • High performance trench technology for extre ..
FDG328P ,P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is produced in• –1.5 A, –20 V.R = 0.145 Ω @ V = –4.5 V ..
