| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F160C3TD |
INTEL |
N/a |
38 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG327N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDG327N
FDG327N ,20V N-Channel PowerTrench MOSFETFDG327NFDG327N® ®PowerTrenchThis N-Channel MOSFET has been designed• 1.5 A, 20 V.R = 90 m Ω = 4.5 ..
FDG327NZ ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 1.5 A, 20 V. R = 90 mΩ @ V = 4.5 V. DS(ON) GSs ..
