| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F160BJB-TTLZU |
SHARP |
N/a |
109 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG318P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Load switch• Compact industry standard SC70-6 surface mount• Power managem ..
FDG326P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –1.5 A, –20 V. R = 140 mΩ @ V = –4.5 VDS(ON) GSF ..
FDG326P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
