| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F15JC10 |
|
N/a |
33 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDG313N ,Digital FET, N-ChannelFeaturesThis N-Channel enhancement mode field effect• 0.95 A, 25 V. R = 0.45 Ω @ V = 4.5 VDS(on) GS ..
FDG313N_NL ,Digital FET, N-ChannelApplications• Gate-Source Zener for ESD ruggedness• Load switch (>6kV Human Body Model).• Batte ..
FDG314P ,Digital FET, P-ChannelFeaturesThis P-Channel enhancement mode field effect• -0.65 A, -25 V. R = 1.1 Ω @ V = -4.5 VDS(ON) ..
