Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F143D57 |
LA |
N/a |
300 |
|
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDFS6N303_NL ,30V N-Channel MOSFET with Schottky DiodeFeatures General DescriptionMOSFET with Schottky Diode DFS6N303 oAMOSFET ELECTRICALV = VI V ..
FDFS6N548 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
FDFS6N754 ,30V Integrated N-Channel PowerTrench?MOSFET and Schottky DiodeApplicationsfor design flexibility DC/DC converters Low Gate Charge (Qg = 4nC) Low Mi ..