| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F1325M |
TOK |
N/a |
20 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDFS2P102A_NL ,Integrated P-Channel PowerTrench MOSFET and Schottky Diodefeatures a fast V < 0.58 V @ 2 A Fswitching, low gate charge MOSFET with very low on- state resist ..
FDFS2P106A ,Integrated 60V P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P106A combines the exceptional • –3.0 A, –60V R = 110 mΩ @ V = –10 V DS(ON) GSp ..
FDFS2P753Z ,-30V Integrated P-Channel PowerTrench?MOSFET and Schottky Diodefeatures a fast switching, low gate Schottky and MOSFET incorporated into single power surface ch ..
