| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F12NM50N |
ST|ST Microelectronics |
N/a |
250 |
 |
|
F1814D ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1B2CCI , STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER)
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F1T3G , 1.0 AMP. Glass Passivated Fast Recovery Rectifiers
F2001 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDFMA3N109 ,30V Integrated N-Channel PowerTrench甅OSFET and Schottky DiodeElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDFS2P102 ,Integrated P-Channel MOSFET and Schottky DiodeFeaturesThe FDFS2P102 combines the exceptional performance of –3.3 A, –20 V. R = 0.125 Ω @ V = –10 ..
FDFS2P102A ,Integrated P-Channel PowerTrench MOSFET and Schottky DiodeFeatures The FDFS2P102A combines the exceptional • –3.3 A, –20V R = 125 mΩ @ V = –10 V DS(ON) GSpe ..
