Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F105992BN |
TI|Texas Instruments |
N/a |
26 |
|
|
F-1065 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F10P20FR , Low Forward Voltage drop Diode
F10P20FR , Low Forward Voltage drop Diode
F10P40F , FAST RECOVERY DIODE
F1205D-1W , DUAL/SINGLE OUTPUT DC-DC CONVERTER
FDD5810 ,N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhmsFeatures Motor / Body Load Control R = 22mΩ (Typ.), V = 5V, I = 29ADS(ON) GS D ABS Systems Q = ..
FDD5810_F085 ,N-Channel Logic Level Trench?MOSFET! 60V, 36A, 27m?Features! Motor / Body Load Control! R = 22m"!#Typ.), V = 5V, I = 29ADS(ON) GS D! ABS Systems! Q = ..
FDD5N50 ,N-Channel UniFETTM MOSFET 500V, 4A, 1.4?Applications• LCD/LED/PDP TV• Lighting• Uninterruptible Power SupplyDDGGSD-PAKSoMOSFET Maximum Rati ..