| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F102052AFN-EL05 |
TI|Texas Instruments |
N/a |
1000 |
 |
|
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F-1065 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDD4243_F085 ,40V P-Channel PowerTrench?MOSFETFeatures Typ r = 36mΩ at V = -10V, I = -6.7A InverterDS(on) GS D Typ r = 48mΩ ..
FDD45AN06LA0 ,60V N-Channel PowerTrench MOSFETFDD45AN06LA0February 2004FDD45AN06LA0®N-Channel PowerTrench MOSFET60V, 22A, 45mΩ
FDD4685 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 27mΩ at V = –10V, I = –8.4AThis P-Channel MOSFET has been produced usi ..
