Partno |
Mfg |
Dc |
Qty |
Available | Descript |
F1010N |
IR|International Rectifier |
N/a |
35 |
|
|
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F-1065 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
FDD3670 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 34 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GSspeci ..
FDD3672 ,N-Channel UltraFET ?Trench MOSFET 100V, 44A, 28mOhmFDD3672June 2002FDD3672®N-Channel UltraFET Trench MOSFET100V, 44A, 28mΩ
FDD3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmFDD3682June 2002FDD3682®N-Channel UltraFET Trench MOSFET100V, 32A, 36mΩ