| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F100307QC |
FAIRCHILD |Fairchild Semiconductor |
N/a |
30 |
 |
|
| F100307QC |
|
N/a |
40 |
|
|
F1004 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
FDD26AN06A0 ,60V N-Channel PowerTrench MOSFET 60V, 36A, 26mOApplications•r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 13n ..
FDD306P ,-12V P-Channel 1.8V Specified PowerTrench MOSFETGeneral DescriptionDS(ON) GS Fast switching speedThis P-Channel 1.8V Specified MOSFET uses Fairchild ..
FDD3510H ,80V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
