| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F100141FC |
NS|National Semiconductor |
N/a |
21 |
 |
|
F1004 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmFDD2582September 2002FDD2582®N-Channel PowerTrench MOSFET150V, 21A, 66mΩ
FDD2612 ,200V N-Channel PowerTrench MOSFETApplications• Fast switching speed• DC/DC converter• Low gate charge (8nC typical)DDGGSTO-252SoAbso ..
FDD26AN06A0 ,60V N-Channel PowerTrench MOSFET 60V, 36A, 26mOApplications•r = 20mΩ (Typ.), V = 10V, I = 36A Motor / Body Load ControlDS(ON) GS DQ (tot) = 13n ..
