| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| F0R1B |
CHINA |
N/a |
50 |
 |
|
F1004 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1032B ,TECHNIK - HIGH RELIABILITY FOR LOW COST
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1034 , PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F1036C ,TECHNIK - HIGH RELIABILITY FOR LOW COST
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?®FDD2572_F085 N-Channel PowerTrench MOSFET ..
FDD2572_F085 ,N-Channel PowerTrench?MOSFET 150V, 29A, 54m?Applicationsr = 45mΩ (Typ.), V = 10V, I = 9A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDD2582 ,N-Channel PowerTrench MOSFET 150V, 21A, 0.066 OhmApplicationsr = 58mΩ (Typ.), V = 10V, I = 7A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
