| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| ESJA59-10AV1 |
FUJI富士通|Fujitsu Microelectronics |
N/a |
6000 |
 |
|
| ESJA59-10AV1 |
FUJIFujitsu|Fujitsu Microelectronics |
N/a |
6000 |
|
|
ESJA59-12A ,High Voltage Silicon DiodeDRAWN
CHECKED _ _
DATE
NAME
APPROVED
DWGNO
Fuji Electric Co.,Ltd.
H04-004-07
..
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ESM1600B ,QUAD COMPARATOR INTERFACE CIRCUITELECTRICAL CHARACTERISTICSo oV = +35V, -25 C ≤ T ≤ +85 C (unless otherwise specified)CC ambSymbol P ..
ESM2012DV ,NPN DARLINGTON POWER MODULEESM2012DVNPN DARLINGTON POWER MODULE■ HIGH CURRENT POWER BIPOLAR MODULE■ VERY LOW R JUNCTION TO CAS ..
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