| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| ESAC83M-004R |
FE |
N/a |
1262 |
 |
|
ESAC83M-006 ,SCHOTTKY BARRIER DIODEFeatures
oarqiirtriitrmtetttr.crme-_
Insulated package by fully molding,
.1ng
Low Vr,
o Atyr ..
ESAC83M-006 ,SCHOTTKY BARRIER DIODEApplications
"MtlttA4syrVf
High speed power swnchmg.
M9rr.,'s-stit 2 Outline Drawings
‘ilsM ..
ESAC85-009 ,SCHOTTKY BARRIER DIODEApplications
o3rMRttR4yr.vy
M9rffv'-vtit 2 Outline Drawings
10’35 c-'-'-""- 45t0?
F.---- m
..
ESAC85-009 ,SCHOTTKY BARRIER DIODEFeatures
. itW,
Low (
q Ad yr.vrRe-FHrFtc'acs
Super high speed switching.
o _ -t29ttr-l6 ..
ESAC85-009 ,SCHOTTKY BARRIER DIODEA-435
ESAC85-009(10A)
'itt'dyNitt3rH8-F'
'Sao/Ft-ps/ri-F'
SCHOTTKY BARRIER DIODE
IHE ..
FA5331M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5331M ,Bipolar IC for power factor correctionBlock diagram1819.41.50.817.6– 0.25 – 0.12.54 0.5FA5332P9161819.21.30.71Pin Pin DescriptionNo. symb ..
FA5331M ,Bipolar IC for power factor correction0~15˚0~15˚Bipolar ICFA5331P(M)/FA5332P(M)FA5331P(M)/FA5332P(M)For Power Factor Correctionn Descript ..
