| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| ES42AD |
|
N/a |
29 |
 |
|
ESAB82-004 ,SCHOTTKY BARRIER DIODEFeatures
. {EVE
Low VF
o AtyryryAe-Furriix
Super high speed switching.
o 'v-f-ttwr-latte ..
ESAB82-004 ,SCHOTTKY BARRIER DIODEApplications
o3$MtetAtyr,sry
M9Ufv'-stit 2 Outline Drawings
10";5 D 333.6302 1.5:”
I -f--l ..
ESAB82M-006 ,SCHOTTKY BARRIER DIODEApplications
035$1E7Jx4~y+77
High speed power swnching.
'rd:YNitt3r'.f8-t'
M9Hfrrtit 2 Outl ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEApplications
o3rMRthAtyr.vry
High speed power switching.
tirdyNttteuf:r-. F
ll"')?.,'-" I O ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEFeatures
omJ4toie'tttetnt:zme-_
Insulated package by fully molding.
. {EVE
Low v,
o xtyr.v ..
FA1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L3N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L3N-T2B ,Compound transistorFEATURES
in millimeters , 0 Resistors Built-in TYPE
_ C
2.8k0.2 V B
l RI R2 = 10 ki2
1,- R2 E
..
