Partno |
Mfg |
Dc |
Qty |
Available | Descript |
ES41AG |
NS|National Semiconductor |
N/a |
1000 |
|
|
ESAB82-004 ,SCHOTTKY BARRIER DIODEFeatures
. {EVE
Low VF
o AtyryryAe-Furriix
Super high speed switching.
o 'v-f-ttwr-latte ..
ESAB82-004 ,SCHOTTKY BARRIER DIODEApplications
o3$MtetAtyr,sry
M9Ufv'-stit 2 Outline Drawings
10";5 D 333.6302 1.5:”
I -f--l ..
ESAB82M-006 ,SCHOTTKY BARRIER DIODEApplications
035$1E7Jx4~y+77
High speed power swnching.
'rd:YNitt3r'.f8-t'
M9Hfrrtit 2 Outl ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEApplications
o3rMRthAtyr.vry
High speed power switching.
tirdyNttteuf:r-. F
ll"')?.,'-" I O ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEFeatures
omJ4toie'tttetnt:zme-_
Insulated package by fully molding.
. {EVE
Low v,
o xtyr.v ..
FA1L3M-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
( Collector Cutoff Current. ICBO VCB = 50 V, IE = o
I ..
FA1L3N ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..
FA1L3N-T1B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL . . . TEST CONDITIONS
Collector ..