ES3J ,3.0 UltraFast Recovery RectifierES3A - ES3J — Fast RectifiersApril 2012ES3A - ES3JFast Rectifiers
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FA1A4M-T2B ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4P ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
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ES3J
3.0 UltraFast Recovery Rectifier
ES3A - ES3J — Fast Rectifiers April 2012 ES3A - ES3J Fast Rectifiers Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. SMC/DO-214AB COLOR BAND DENOTES CATHODE • Superfast recovery times for high efficiency. Absolute Maximum Ratings * T = 25°C unless otherwise noted a Value Symbol Parameter Units ES3A ES3B ES3C ES3D ES3J V Maximum Repetitive Reverse Voltage 50 100 150 200 600 V RRM Average Rectified Forward Current, I 3.0 A F(AV) .375” lead length @ T = 75°C a Non-repetitive Peak Forward Surge Current I 100 A FSM 8.3 ms Single Half-Sine-Wave T T Operating Junction and Storage Temperature Range -50 to +150 °C J, STG * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 1.66 W D R Thermal Resistance, Junction to Ambient * 47 °C/W θJA R Thermal Resistance, Junction to Lead * 12 °C/W θJL * Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics T = 25°C unless otherwise noted a Value Symbol Parameter Units ES3A ES3B ES3C ES3D ES3J V Maximum Forward Voltage @ I = 3.0 A 0.95 1.7 V F F Reverse Recovery Time Typ. 20 35 ns T rr I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR Max. 30 45 ns Maximum Reverse Current @ rated V R I T = 25°C 10 μA R a T = 100°C 500 μA a C Total Capacitance V = 4.0 V, f = 1.0 MHz 45 pF T R © 2012 ES3A - ES3J Rev. F2 1
