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EMZ1ROHMN/a80000avaiSOT-563 Plastic-Encapsulate Biploar Transistors


EMZ1 ,SOT-563 Plastic-Encapsulate Biploar TransistorsTHERMAL CHARACTERISTICSCASE 463APLASTICCharacteristic(One Junction Heated)Symbol Max UnitMARKING DI ..
EMZ1DXV6T1 ,Dual General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitQ1: PNPCollector−Base B ..
ENE361D-07A ,Z-TRAP ENE seriesEN E series _ Surge Absorbers Z-TRAP ENE series Nominal varistor voltage 200 to 470V I
ES3J ,3.0 UltraFast Recovery RectifierES3A - ES3J — Fast RectifiersApril 2012ES3A - ES3JFast Rectifiers
ESAB82-004 ,SCHOTTKY BARRIER DIODEFeatures . {EVE Low VF o AtyryryAe-Furriix Super high speed switching. o 'v-f-ttwr-latte ..
ESAB82-004 ,SCHOTTKY BARRIER DIODEApplications o3$MtetAtyr,sry M9Ufv'-stit 2 Outline Drawings 10";5 D 333.6302 1.5:” I -f--l ..
ESAB82M-006 ,SCHOTTKY BARRIER DIODEApplications 035$1E7Jx4~y+77 High speed power swnching. 'rd:YNitt3r'.f8-t' M9Hfrrtit 2 Outl ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEApplications o3rMRthAtyr.vry High speed power switching. tirdyNttteuf:r-. F ll"')?.,'-" I O ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEFeatures omJ4toie'tttetnt:zme-_ Insulated package by fully molding. . {EVE Low v, o xtyr.v ..


EMZ1
SOT-563 Plastic-Encapsulate Biploar Transistors
EMZ1DXV6T1,
EMZ1DXV6T5
Product Preview
Dual General Purpose
Transistors
NPN/PNP Dual (Complimentary)

This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications. Lead−Free Solder Plating Low VCE(SAT), �0.5 V
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
FR−4 @ Minimum Pad.
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