| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| EMIF10-LCD01F2A7 |
STM|ST Microelectronics |
N/a |
2115 |
 |
|
EMIF11-10002C4 ,9 LINES EMI FILTER AND ESD PROTECTIONPIN CONFIGURATION (ball side)n EMI symmetrical (I/O) low-pass filtern High efficiency in EMI filter ..
EMT1DXV6T1 ,Dual General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitCollector−Base Breakdow ..
EMX1DXV6T1 ,Dual NPN General Purpose Amplier TransistorELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitCollector-Base Breakdow ..
EMX2DXV6T5 ,Dual NPN General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitCollector-Base Breakdow ..
EMZ1 ,SOT-563 Plastic-Encapsulate Biploar TransistorsTHERMAL CHARACTERISTICSCASE 463APLASTICCharacteristic(One Junction Heated)Symbol Max UnitMARKING DI ..
ES3J ,3.0 UltraFast Recovery RectifierES3A - ES3J — Fast RectifiersApril 2012ES3A - ES3JFast Rectifiers
ESAB82-004 ,SCHOTTKY BARRIER DIODEFeatures
. {EVE
Low VF
o AtyryryAe-Furriix
Super high speed switching.
o 'v-f-ttwr-latte ..
ESAB82-004 ,SCHOTTKY BARRIER DIODEApplications
o3$MtetAtyr,sry
M9Ufv'-stit 2 Outline Drawings
10";5 D 333.6302 1.5:”
I -f--l ..
