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EMC2DXV5T1ONN/a56030avaiDual Common Base-Collector Bias Resistor Transistors


EMC2DXV5T1 ,Dual Common Base-Collector Bias Resistor TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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EMC2DXV5T1
Dual Common Base-Collector Bias Resistor Transistors
EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseïemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1 series,
two complementary BRT devices are housed in the SOTï553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features Simplifies Circuit Design Reduces Board Space Reduces Component Count These are PbïFree Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, ï minus sign for Q1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM 5 R2 12
http://
SOTï553
CASE 463B
Ux M= Specific Device Code
x = C, 3, E, or 5= Date Code = PbïFree Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
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