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EGP20GVISN/a7000avaiFast Rectifiers (Glass Passivated)


EGP20G ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP20G ,Fast Rectifiers (Glass Passivated)
EGP20J ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP20K ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP30B ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP30D ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..


EGP20G
Fast Rectifiers (Glass Passivated)
EGP20A-EGP20K EGP20A - EGP20K Features • Glass passivated cavity-free junction. • High surge current capability. • Low leakage current. • Superfast recovery time for high efficiency. DO-15 COLOR BAND DENOTES CATHODE • Low forward voltage, high current capability. Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 20A 20B 20C 20D 20F 20G 20J 20K V Maximum Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V RRM I Average Rectified Forward Current, F(AV) 2.0 A .375 " lead length @ T = 55°C A I Non-repetitive Peak Forward Surge Current FSM 75 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +150 C T ° stg T Operating Junction Temperature -65 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 3.15 W D Thermal Resistance, Junction to Ambient 40 R °C/W θJA Thermal Resistance, Junction to Lead 15 R °C/W θJL Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Parameter Units 20A 20B 20C 20D 20F 20G 20J 20K V Forward Voltage @ 2.0 A 0.95 1.25 1.7 V F t Reverse Recovery Time rr 50 75 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R rr I 5.0 μA R Reverse Current @ rated V T = 25°C R A 100 μA T = 125°C A C Total Capacitance T 70 45 pF V = 4.0 V, f = 1.0 MHz R 2001 EGP20A - EGP20K, Rev. C
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