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DS1315S-5 |DS1315S5DALLASN/a25avaiPhantom Time Chip


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DS1315S-5
Phantom Time Chip
DESCRIPTION
The DS1315 Phantom Time Chip is a
combination of a CMOS timekeeper and a
nonvolatile memory controller. In the absence of
power, an external battery maintains the
timekeeping operation and provides power for a
CMOS static RAM. The watch keeps track of
hundredths of seconds, seconds, minutes, hours,
day, date, month, and year information. The last
day of the month is automatically adjusted for
months with fewer than 31 days, including leap
year correction. The watch operates in one of two
formats: a 12-hour mode with an AM/PM
indicator or a 24-hour mode. The nonvolatile
controller supplies all the necessary support
circuitry to convert a CMOS RAM to a
nonvolatile memory. The DS1315 can be
interfaced with either RAM or ROM without
leaving gaps in memory.
PIN CONFIGURATIONS

Pin Configurations continued at end of data sheet.

FEATURES
 Real-Time Clock Keeps Track of Hundredths
of Seconds, Seconds, Minutes, Hours, Days,
Date of the Month, Months, and Years  Automatic Leap Year Correction Valid Up to
2100  No Address Space Required to Communicate
with RTC  Provides Nonvolatile Controller Functions for
Battery Backup of SRAM  Supports Redundant Battery Attachment for
High-Reliability Applications  Full ±10% VCC Operating Range  +3.3V or +5V Operation  Industrial (-40°C to +85°C) Operating
Temperature Ranges Available
PIN DESCRIPTION

X1, X2 - 32.768kHz Crystal Connection - Write Enable
BAT1 - Battery 1 Input
GND - Ground - Data Input - Data Output
ROM/RAM - ROM/RAM Mode Select
CEO - Chip Enable Output
CEI - Chip Enable Input - Output Enable
RST - Reset
BAT2 - Battery 2 Input
VCC0 - Switched Supply Output
VCC1 - Power Supply Input
19-6080; Rev 11/11
www.dalsemi.com

PDIP (300 mils)

16
15
14
13
12
11
10
VCC1
VCC0
BAT2
RST
OE
CEI
CEO
ROM/RAM
X1
X2
WE
BAT1
GND
GND
DS1315
DS1315
Phantom Time Chip
DS1315 Phantom Time Chip
ORDERING INFORMATION
PART TEMP RANGE VOLTAGE
(V) PIN-PACKAGE TOP MARK*

DS1315-33+ 0°C to +70°C 3.3 16 PDIP (300 mils) DS1315 336
DS1315N-33+ -40°C to +85°C 3.3 16 PDIP (300 mils) DS1315 336
DS1315-5+ 0°C to +70°C 5 16 PDIP (300 mils) DS1315 56
DS1315N-5+ -40°C to +85°C 5 16 PDIP (300 mils) DS1315 56
DS1315E-33+ 0°C to +70°C 3.3 20 TSSOP (4.4mm) DS1315E XXXX-336
DS1315EN-33+ -40°C to +85°C 3.3 20 TSSOP (4.4mm) DS1315E XXXX-336
DS1315EN-33+T&R -40°C to +85°C 3.3 20 TSSOP (4.4mm) DS1315E XXXX-336
DS1315E-5+ 0°C to +70°C 5 20 TSSOP (4.4mm) DS1315E XXXX-56
DS1315EN-5+ -40°C to +85°C 5 20 TSSOP (4.4mm) DS1315E XXXX-56
DS1315EN-5+T&R -40°C to +85°C 5 20 TSSOP (4.4mm) DS1315E XXXX-56
DS1315S-33+ 0°C to +70°C 3.3 16 SO (300 mils) DS1315 336
DS1315SN-33+ -40°C to +85°C 3.3 16 SO (300 mils) DS1315 336
DS1315S-5+ 0°C to +70°C 5 16 SO (300 mils) DS1315 56
DS1315SN-5+ -40°C to +85°C 5 16 SO (300 mils) DS1315S 56
DS1315S-5+T&R 0°C to +70°C 5 16 SO (300 mils) DS1315S 56
+Denotes a lead(Pb)-free/RoHS-compliant package.
T&R = Tape and reel.
*A “+” symbol located anywhere on the top mark indicates a lead-free device. An “N” located in the bottom right-hand corner of the top of the
package denotes an industrial device. “xxxx” can be any combination of characters.
DS1315 Phantom Time Chip
Figure 1. Block Diagram

DS1315 Phantom Time Chip
Operation

Communication with the Time Chip is established by pattern recognition of a serial bit stream of 64 bits
which must be matched by executing 64 consecutive write cycles containing the proper data on data in
(D). All accesses which occur prior to recognition of the 64-bit pattern are directed to memory via the
chip enable output pin (CEO).
After recognition is established, the next 64 read or write cycles either extract or update data in the Time
Chip and CEO remains high during this time, disabling the connected memory.
Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control
of chip enable input (CEI), output enable (OE), and write enable (WE). Initially, a read cycle using the
CEI and OE control of the Time Chip starts the pattern recognition sequence by moving pointer to the
first bit of the 64-bit comparison register. Next, 64 consecutive write cycles are executed using the CEI
and WE control of the Time Chip. These 64 write cycles are used only to gain access to the Time Chip.
When the first write cycle is executed, it is compared to bit 1 of the 64-bit comparison register. If a match
is found, the pointer increments to the next location of the comparison register and awaits the next write
cycle. If a match is not found, the pointer does not advance and all subsequent write cycles are ignored. If
a read cycle occurs at any time during pattern recognition, the present sequence is aborted and the
comparison register pointer is reset. Pattern recognition continues for a total of 64 write cycles as
described above until all the bits in the comparison register have been matched. (This bit pattern is shown
in Figure 2). With a correct match for 64 bits, the Time Chip is enabled and data transfer to or from the
timekeeping registers may proceed. The next 64 cycles will cause the Time Chip to either receive data on
D, or transmit data on Q, depending on the level of OE pin or the WE pin. Cycles to other locations
outside the memory block can be interleaved with CEI cycles without interrupting the pattern recognition
sequence or data transfer sequence to the Time Chip.
A standard 32.768kHz quartz crystal can be directly connected to the DS1315 via pins 1 and 2 (X1, X2).
The crystal selected for use should have a specified load capacitance (CL) of 6 pF. For more information
on crystal selection and crystal layout considerations, refer to Application Note 58: Crystal
Considerations with Maxim Real-Time Clocks (RTCs).
DS1315 Phantom Time Chip
Figure 2. Time Chip Comparison Register Definition

Note: The pattern recognition in Hex is C5, 3A, A3, 5C, C5, 3A, A3, 5C. The odds of this pattern being

accidentally duplicated and causing inadvertent entry to the Phantom Time Chip are less than 1 in 1019.
DS1315 Phantom Time Chip
Nonvolatile Controller Operation

The operation of the nonvolatile controller circuits within the Time Chip is determined by the level of the
ROM/RAM select pin. When ROM/RAM is connected to ground, the controller is set in the RAM mode
and performs the circuit functions required to make CMOS RAM and the timekeeping function
nonvolatile. A switch is provided to direct power from the battery inputs or VCCI to VCCO with a
maximum voltage drop of 0.3 volts. The VCCO output pin is used to supply uninterrupted power to CMOS
SRAM. The DS1315 also performs redundant battery control for high reliability. On power-fail, the
battery with the highest voltage is automatically switched to VCCO. If only one battery is used in the
system, the unused battery input should be connected to ground.
The DS1315 safeguards the Time Chip and RAM data by power-fail detection and write protection.
Power-fail detection occurs when VCCI falls below VPF which is set by an internal bandgap reference. The
DS1315 constantly monitors the VCCI supply pin. When VCCI is less than VPF, power-fail circuitry forces
the chip enable output (CEO) to VCCI or VBAT-0.2 volts for external RAM write protection. During
nominal supply conditions, CEO will track CEI with a propagation delay. Internally, the DS1315 aborts
any data transfer in progress without changing any of the Time Chip registers and prevents future access
until VCCI exceeds VPF. A typical RAM/Time Chip interface is illustrated in Figure 3.
When the ROM/RAM pin is connected to VCCO, the controller is set in the ROM mode. Since ROM is a
read-only device that retains data in the absence of power, battery backup and write protection is not
required. As a result, the chip enable logic will force CEO low when power fails. However, the Time
Chip does retain the same internal nonvolatility and write protection as described in the RAM mode. A
typical ROM/Time Chip interface is illustrated in Figure 4.
Figure 3. DS1315-to-RAM/Time Chip Interface

DS1315 Phantom Time Chip
Figure 4. ROM/Time Chip Interface

Time Chip Register Information

Time Chip information is contained in eight registers of 8 bits, each of which is sequentially accessed 1
bit at a time after the 64-bit pattern recognition sequence has been completed. When updating the Time
Chip registers, each must be handled in groups of 8 bits. Writing and reading individual bits within a
register could produce erroneous results. These read/write registers are defined in Figure 5.
Data contained in the Time Chip registers is in binary coded decimal format (BCD). Reading and writing
the registers is always accomplished by stepping though all eight registers, starting with bit 0 of register 0
and ending with bit 7 of register 7.
AM/PM/12/24-Mode

Bit 7 of the hours register is defined as the 12- or 24-hour mode select bit. When high, the 12-hour mode
is selected. In the 12-hour mode, bit 5 is the AM/PM bit with logic high being PM. In the 24-hour mode,
bit 5 is the 20-hour bit (20-23 hours).
Oscillator and Reset Bits

Bits 4 and 5 of the day register are used to control the reset and oscillator functions. Bit 4 controls the
reset pin input. When the reset bit is set to logic 1, the reset input pin is ignored. When the reset bit is set
to logic 0, a low input on the reset pin will cause the Time Chip to abort data transfer without changing
data in the timekeeping registers. Reset operates independently of all other in-puts. Bit 5 controls the
oscillator. When set to logic 0, the oscillator turns on and the real time clock/calendar begins to
increment.
DS1315 Phantom Time Chip
Zero Bits

Registers 1, 2, 3, 4, 5, and 6 contain 1 or more bits that will always read logic 0. When writing these
locations, either a logic 1 or 0 is acceptable.
Figure 5. Time Chip Register Definition

DS1315 Phantom Time Chip
ABSOLUTE MAXIMUM RATINGS

Voltage Range on Any Pin Relative to Ground -0.3V to +6.0V
Operating Temperature Range, Commercial 0°C to +70°C
Operating Temperature Range, Industrial -40°C to +85°C
Storage Temperature Range -55°C to +125°C
Soldering Temperature (reflow) +260°C
Lead Temperature (soldering, 10s) +260°C
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED OPERATING CONDITIONS

(TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Power-Supply Voltage
Operation
5V VCC 4.5 5.0 5.5 V 1 3.3V 3.0 3.3 3.6
Input Logic 1 VIH 2.2 VCC + 0.3 V 1
Input Logic 0 VIL -0.3 +0.6 V 1
Battery Voltage VBAT1 or
VBAT2
VBAT1,
VBAT2 2.5 3.7 V
DC OPERATING ELECTRICAL CHARACTERISTICS

(VCC = 5.0V ±10%, TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Average VCC Power-Supply
Current ICC1 6 mA 6
VCC Power-Supply Current,
(VCC0 = VCCI - 0.3) ICC01 150 mA 7
TTL Standby Current CEI = VIH) ICC2 4 mA 6
CMOS Standby Current CEI = VCCI - 0.2) ICC3 1.3 mA 6
Input Leakage Current
(any input) IIL -1 +1 µA 10
Output Leakage Current
(any input) IOL -1 +1 µA
Output Logic 1 Voltage
(IOUT = -1.0 mA) VOH 2.4 V 2
Output Logic 0 Voltage
(IOUT = 4.0 mA) VOL 0.4 V 2
Power-Fail Trip Point VPF 4.25 4.5 V
Battery Switch Voltage VSW VBAT1,
VBAT2 13
DS1315 Phantom Time Chip
DC POWER-DOWN ELECTRICAL CHARACTERISTICS

(VCC < 4.5V, TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

CEO Output Voltage VCEO
VCCI - 0.2
or
VBAT1,2 -
0.2 V 8
VBAT1 or VBAT2 Battery
Current IBAT 0.5 µA 6
Battery Backup Current
@ VCCO = VBAT-0.2V ICCO2 10 µA 9
AC ELECTRICAL OPERATING CHARACTERISTICS—ROM/RAM = GND

(VCC = 5.0V ±10%, TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Read Cycle Time tRC 65 ns
CEI Access Time tCO 55 ns Access Time tOE 55 ns
CEI to Output Low-Z tCOE 5 ns to Output Low-Z tOEE 5 ns
CEI to Output High-Z tOD 25 ns to Output High-Z tODO 25 ns
Read Recovery tRR 10 ns
Write Cycle tWC 65 ns
Write Pulse Width tWP 55 ns
Write Recovery tWR 10 ns 4
Data Setup tDS 30 ns 5
Data Hold Time tDH 0 ns 5
CEI Pulse Width tCW 55 ns Pulse Width tOW 55 ns
RST Pulse Width tRST 65 ns
AC ELECTRICAL OPERATING CHARACTERISTICS—ROM/RAM = VCCO

(VCC = 5.0V ±10%, TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Read Cycle Time tRC 65 ns
CEI Access Time tCO 55 ns Access Time tOE 55 ns
CEI to Output Low Z tCOE 5 ns to Output Low Z tOEE 5 ns
CEI to Output High Z tOD 25 ns to Output High Z tODO 25 ns
Address Setup Time tAS 5 ns
Address Hold Time tAH 5 ns
DS1315 Phantom Time Chip
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Write Cycle tWC 65 ns
CEI Pulse Width tCW 55 ns Pulse Width tOW 55 ns
Write Recovery tWR 10 ns 4
Data Setup tDS 30 ns 5
Data Hold Time tDH 0 ns 5
RST Pulse Width tRST 65 ns
DC OPERATING ELECTRICAL CHARACTERISTICS

(VCC = 3.3V ±10%, TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Average VCC Power-Supply
Current ICC1 3 mA 6
Average VCC Power-Supply
Current,
(VCCO = VCCI - 0.3)
ICC01 100 mA 7
TTL Standby Current CEI = VIH) ICC2 2 mA 6
CMOS Standby Current CEI = VCCI - 0.2) ICC3 1.1 mA 6
Input Leakage Current
(any input) IIL -1 +1 µA
Output Leakage Current
(any input) ILO -1 +1 µA
Output Logic 1 Voltage
(IOUT = 0.4 mA) VOH 2.4 V 2
Output Logic 0 Voltage
(IOUT = 1.6 mA) VOL 0.4 V 2
Power-Fail Trip Point VPF 2.8 2.97 V
Battery Switch Voltage VSW
VBAT1,
VBAT2,
or VPF 14
DC POWER-DOWN ELECTRICAL CHARACTERISTICS

(VCC < 2.97V, TA = Over the operating range.)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

CEO Output Voltage VCEO
VCCI
or
VBAT1,2
- 0.2 V 8
VBAT1 OR VBAT2 Battery Current IBAT 0.5 µA 6
Battery Backup Current
at VCCO = VBAT - 0.2 ICCO2 10 µA 9
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