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DALC12STN/a4000avaiLOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION
DALC12ST8N/a2747avaiLOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION


DALC12 ,LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTIONAPPLICATIONSWhere ESD protection for high speed datalines isrequired :LAN / WAN equipmentComputer I ..
DALC12 ,LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTIONFEATURESARRAYOF12 DIODESFOR ESDPROTECTION.PEAK REVERSE VOLTAGE V = 18V PERRRM I/O 1REF 1DIODE.VERYL ..
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DALC12
LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION
DALC112S1
January 1998-Ed:4
IEC1000-4-2level3 8 kV(airdischarge) kV(contactdischarge)
COMPLIESWITHTHE FOLLOWINGSTANDARDS:

ARRAYOF12DIODESFOR ESDPROTECTION.
PEAK REVERSE VOLTAGE VRRM= 18V PER
DIODE.
VERYLOWCAPACITANCEPERDIODE:C <5pF.
VERY LOW LEAKAGECURRENT:IR<2μA.
FEATURES
SO8
FUNCTIONAL DIAGRAM

I/O5
I/O6
I/O1
I/O2
I/O3
I/O4
REF1
REF2
LOW CAPACITANCE DIODE
ARRAY FOR ESD PROTECTION
Application Specific Discretes
A.S.D.TM
Where ESD protectionfor high speed datalinesis
required:
LAN/ WANequipment
ComputerI/O
Graphicvideo port
SettopboxI/O
MAIN APPLICATIONS

ARRAYof12 diodes configuredby cellsof2
diodes, eachcell being usedto protect signalline
fromtransient overvoltagesby clamping action.
Its very low capacitance allowsto protect fast
signals withno distortion.Itis particularlysuitedfor
theprotectionof graphicvideo ports.
DESCRIPTION

1/3
Symbol Parameter Value Unit
VRRM
Peak reverse voltageper diode 18 V
Tstg

Storage temperaturerange
Maximum junctiontemperature
-55to+ 150
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C).
Symbol Parameter Typ. Max. Unit
Forward voltage IF=50mA 1.3 V Reverse leakage currentper diode VR =15V 2 μA
Input capacitance betweenLine and GND
Vcc=5V, VRMS= 30mV,F=1 MHz
(seefigure1 below)
7pF
ELECTRICALCHARACTERISTICS
(Tamb =25°C).
TYPICALAPPLICATION

Vcc
DALC112S1
Fig1:
Input capacitancemeasurement
+VCC connected between REF1 and REF2
Input applied:
Vcc= 5V, VRMS=30 mV,F =1MHzG
I/OCC
REF2
REF1
DALC112S1

2/3
PACKAGE MECHANICAL DATA
SO8 (Plastic)
Informationfurnishedis believedtobe accurate andreliable.However, STMicroelectronics assumesno responsibilityforthe consequencesof
useofsuchinformation norforany infringementof patentsorotherrightsof thirdparties whichmay resultfromits use.No licenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.Thispublicationsupersedes andreplaces allinformationpreviously supplied.
STMicroelectronics products arenot authorizedfor useas criticalcomponentsinlife support devices orsystems withoutexpress writtenap-
provalof STMicroelectronics. 1998 STMicroelectronics- PrintedinItaly-All rights reserved.
STMicroelectronics GROUPOF COMPANIES
Australia- Brazil- Canada- China- France -Germany-Italy -Japan- Korea- Malaysia- Malta- Mexico- Morocco-The
Netherlands -Singapore- Spain -Sweden- Switzerland- Taiwan- Thailand- United Kingdom- U.S.A.
REF. DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max. 1.75 0.069 0.1 0.25 0.004 0.010 1.65 0.065 0.35 0.48 0.014 0.019 0.19 0.25 0.007 0.010 0.50 0.020 45° (typ) 4.8 5.0 0.189 0.197 5.8 6.2 0.228 0.244 1.27 0.050 3.81 0.150 3.8 4.0 0.15 0.157 0.4 1.27 0.016 0.050 0.6 0.024
S8° (max)
Type Marking OrderCode Packaging (Base Qty)

DALC112S1 DALC12 DALC112S1
DALC112S1RL
tube (100)
tape& reel (2500)
MARKING
ORDER CODE
= tape& reel (2500pcs). tube (100 pcs).
SO8 Package
DALC 1 12 S 1 RL

Version
Diode Array
Low
Capacitance
Nb.of Diodes
PACKAGING: Preferredpackagingis tapeand reel.
DALC112S1

3/3
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