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DAC7731E from TI/BB, Texas Instruments 120pcs , SSOP24,16-Bit/ Voltage Output/ Serial Input DIGITAL-TO-ANALOG CONVERTER
Partno Mfg Dc Qty Available
DAC7731E TI/BB N/a 120
DAC7731E from BB, 175pcs , SSOP24,16-Bit/ Voltage Output/ Serial Input DIGITAL-TO-ANALOG CONVERTER
DAC7731E from TI, Texas Instruments 500pcs,16-Bit/ Voltage Output/ Serial Input DIGITAL-TO-ANALOG CONVERTER
DAC7731E from TEXAS/BB, 120pcs , SSOP24,16-Bit/ Voltage Output/ Serial Input DIGITAL-TO-ANALOG CONVERTER
ELECTRICAL CHARACTERISTICSAll specifications at T = T to T , V = +15V, V = –15V, V = +5V, Internal refi⁄ence enabled, unless otherwise noted.A MIN MAX CC SS DDDAC7731E DAC7731EB DAC7731ECPARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITSACCURACYLinearity Error (INL) ±6 ±4 ±3LSBT = 25°C ±5 ±3 ±2LSBADifferential Linearity Error (DNL) ±4 ±2 ±1LSBMonotonicity 14 15 16 BitsOffset Error ±0.1 ✻✻ % of FSROffset Error Drift ±2 ✻✻ ppm/°CGain Error With Internal REF ±0.4 ±0.25 ±0.15 % of FSRWith External REF ±0.25 ±0.1 ✻ % of FSRGain Error Drift With Internal REF ±15 ±10 ±7 ppm/°CPSRR (V or V ) At Full-Scale 50 200 ✻✻ ✻ ✻ ppm/VCC SS(1)ANALOG OUTPUT(2)Voltage Output +11.4/–4.75 0 to 10 ✻✻ V+11.4/–11.4 ±10 ✻✻ V+11.4/–6.4 ±5 ✻✻ VOutput Current ±5 ✻✻ mAOutput Impeadance 0.1 ✻✻ ΩMaximum Load Capacitance 200 ✻✻ pFShort-Circuit Current ±15 ✻✻ mAShort-Circuit Duration AGND Indefinite ✻✻REFERENCEReference Output 9.96 10 10.04 9.975 ✻ 10.025 ✻✻ ✻ VREF Impedance 400 ✻✻ ΩOUTREF Voltage Drift ±15 ±10 ±7 ppm/°COUT(3)REF Voltage Adjustment ±25 ✻✻ mVOUT(4)REF Input Range 4.75 V – 1.4✻✻✻ ✻ VIN CC REF Input Current 10 ✻✻ nAINREFADJ Input Range Absolute Max Value that010✻✻✻ ✻ Vcan be applied is VCCREFADJ Input Impedance 50 ✻✻ kΩV Output Current –2+2✻✻✻ ✻ mAREFV Impedance 1 ✻✻ ΩREFDYNAMIC PERFORMANCESettling Time to ±0.003% 20V Output Step 3 5 ✻✻ ✻ ✻ µ sR = 5kΩ , C = 200pF,L Lwith external REFOUT(5)to REF filterIN Digital Feedthrough 2 ✻✻ nV-sOutput Noise Voltage at 10kHz 100 ✻✻ nV/√HzDIGITAL INPUTV |I | < 10µ A 0.7 • V ✻✻ VIH H DDV |I | < 10µ A 0.3 • V ✻✻ VIL L DDDIGITAL OUTPUTV I = –0.8mA 3.6 ✻✻ VOH OHV I = 1.6mA 0.4 ✻✻ VOL OLPOWER SUPPLYV +4.75 +5.0 +5.25 ✻✻✻ ✻✻ ✻ VDDV +11.4 +15.75✻✻✻ ✻ VCCV Bipolar Operation –15.75 –11.4✻✻✻ ✻ VSSUnipolar Opeation –15.75 –4.75✻✻✻ ✻ VI 100 ✻✻ µ ADDI Unloaded 4 6 ✻✻ ✻ ✻ mACCI Unloaded –4 –2.5 ✻✻ ✻✻ mASSPower No Load, Ext. Reference 85 ✻✻ mWNo Load, Int. Reference 100 150 ✻✻ ✻ ✻ mWTEMPERATURE RANGESpecified Performance –40 +85✻✻✻ ✻ °C✻ Specifications same as grade to the left.NOTES: (1) With minimum V /V requirements, internal reference enabled.CC SS(2) Please refer to the Theory of Operation section for more information with respect to output voltage configurations.(3) See Figure 11 for gain and offset adjustment connection diagrams when using the internal reference.(4) The minimum value for REF must be equal to the greater of V +14V and +4.75V, where +4.75V is the minimum voltage allowed.IN SS(5) Reference low-pass filter values: 100kΩ , 1.0µ F (see Figure 14).DAC77313SBAS249BMAXIMUM RATINGSELECTROSTATICV to V ... –0.3V to +32VCC SSDISCHARGE SENSITIVITYV to AGND ....... –0.3V to +16VCC V to AGND ....... –16V to +0.3VSS This integrated circuit can be damaged by ESD. Texas Instru-AGND to DGND .... –0.3V to 0.3V ments recommends that all integrated circuits be handled withREF to AGND ........0V to V – 1.4VIN CCV to DGND –0.3V to +6VDD appropriate precautions. Failure to observe proper handlingDigital Input Voltage to DGND ...... –0.3V to V + 0.3VDDand installation procedures can cause damage.Digital Output Voltage to DGND ... –0.3V to V + 0.3VDDOperating Temperature Range .... –40°C to +85°CESD damage can range from subtle performance degradationStorage Temperature Range ..... –65°C to +150°Cto complete device failure. Precision integrated circuits may beJunction Temperature (TJ Max) ....... +150°Cmore susceptible to damage because very small parametricNOTE: (1) Stresses above those listed under Absolute TIMING CHARACTERISTICSV = +15V, V = –15V, V = 5V; R = 2kΩ to AGND; C = 200pF to AGND; all specifications –40°C to +85°C, unless otherwise noted.CC SS DD L LDAC7731PARAMETER DESCRIPTION MIN TYP MAX UNITSt SCLK HIGH Time 25 nsWHt SCLK LOW Time 25 nsWLt Setup Time: Data in valid before rising SCLK 5 nsSDIt Hold Time: Data in valid after rising SCLK 20 nsHDIt Setup Time: CS falling edge before first rising SCLK 15 nsSCSt Hold Time: CS rising edge after 16th rising SCLK 0 nsHSCt Delay Time: CS Falling Edge to Data Out valid, C = 20pF on SDO 50 nsDDO Lt Hold Time: Data Out valid after SCLK rising edge, C 20pF on SDO 50 nsHDO Lt Delay Time: CS rising edge to SDO = High Impedance 70 nsDDOZt CS HIGH Time 50 nsWCSHt LDAC LOW Time 20 nsWLDLt LDAC HIGH Time 20 nsWLDHt Setup Time: 16th Rising SCLK Before LDAC Rising Edge 15 nsSLDt Delay Time: LDAC rising edge to first SCLK rising edge of next 15 nsDLDtransfer cycle.t Setup Time: CS High before falling SCLK edge following 16th 5 nsSCLKrising SCLK edget Setup Time: RSTSEL Valid Before RST LOW 0 nsSRSt Hold Time: RSTSEL valid after RST HIGH 20 nsHRSt RST LOW Time 30 nsWRLt DAC V Settling Time 5 µ sS OUTINTERFACE TIMINGtSCS tHCSCS tWCSHtWHSCLK 12 16t tWL SCLKtHDItSDIB15 B14 B13 B0 C15 C14 C13 C12SDItDDO Word BWord Ct tHDO DDOZA15 A14 A13 A0 B15 B14 B13 B12SDOtDLDWord BtWord AWLDLtLDAC WLDHtSLD tSVOUT±0.003% of FSRError BandsRESET TIMINGtSRSRSTSELtHRStRST WRL+FS tS(RSTSEL = LOW)VMin-ScaleOUT–FS+FSMid-Scale(RSTSEL = HIGH)VOUT–FSDAC77314SBAS249BMAXIMUM RATINGSELECTROSTATICV to V ... –0.3V to +32VCC SSDISCHARGE SENSITIVITYV to AGND ....... –0.3V to +16VCC V to AGND ....... –16V to +0.3VSS This integrated circuit can be damaged by ESD. Texas Instru-AGND to DGND .... –0.3V to 0.3V ments recommends that all integrated circuits be handled withREF to AGND ........0V to V – 1.4VIN CCV to DGND –0.3V to +6VDD appropriate precautions. Failure to observe proper handlingDigital Input Voltage to DGND ...... –0.3V to V + 0.3VDDand installation procedures can cause damage.Digital Output Voltage to DGND ... –0.3V to V + 0.3VDDOperating Temperature Range .... –40°C to +85°CESD damage can range from subtle performance degradationStorage Temperature Range ..... –65°C to +150°Cto complete device failure. Precision integrated circuits may beJunction Temperature (TJ Max) ....... +150°Cmore susceptible to damage because very small parametricNOTE: (1) Stresses above those listed under Absolute

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