| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BZX55C36-TAP |
VISHAY|Vishay |
N/a |
60000 |
 |
|
BZX55C39 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODESZeners BZX55C2V4 - BZX55C91ZenersBZX55C2V4 - BZX55C91Tolerance = 5%Absolute Maximum Ratings * T = ..
BZX55C3V0 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODESElectrical Characteristics T =25°C unless otherwise noted AV (V) @ I (Note 1) I (µ A) @ VZ @ I T ..
BZX55C3V3 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
BZX55C3V3 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
BZX55-C3V3 ,TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES
CA3127 ,NPN Transistor Array, High Frequency Applications From DC to 500MHzElectrical Specifications T = 25 CAPARAMETER TEST CONDITIONS MIN TYP MAX UNITSDC CHARACTERISTICS (F ..
CA3127 ,NPN Transistor Array, High Frequency Applications From DC to 500MHzDYNAMIC CHARACTERISTICSNoise Figure f = 100kHz, R = 500Ω, I = 1mA - 2.2 - dBS CGain-Bandwidth Produ ..
CA3127 ,NPN Transistor Array, High Frequency Applications From DC to 500MHzFeaturesThe CA3127 consists of five general purpose silicon NPN • Gain Bandwidth Product (f ) . . . ..
