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BYV79E-200 |BYV79E200NXP N/a1780avaiUltrafast power diode


BYV79E-200 ,Ultrafast power diodeLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITION ..
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BYV79E-200
Ultrafast power diode

��� Semiconductors �Product specification
Rectifier diodes BYV79E series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 150 V/ 200 V
• Fast switching • Soft recovery characteristic VF ≤ 0.9 V
• Reverse surge capability
• High thermal cycling performance IF(AV) = 14 A• Low thermal resistance
IRRM ≤ 0.2 Arr ≤ 30 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)

Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intendedfor useas output rectifiers high frequency switched mode 1 cathode
power supplies. anode
The BYV79E seriesis suppliedin
the conventional leaded SOD59 tab cathode
(TO220AC) package.
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV79E -150 -200

VRRM Peak repetitive reverse voltage - 150 200 V
VRWM Crest working reverse voltage - 150 200 V Continuous reverse voltage Tmb ≤ 145˚C - 150 200 V
IF(AV) Average forward current1 square wave - 14 A
δ = 0.5; Tmb ≤ 120 ˚C
IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 28 A
Tmb ≤ 120 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 150 A
current t = 8.3 ms - 160 A
sinusoidal; with reapplied
VRWM(max)
IRRM Repetitive peak reverse current tp = 2 μs; δ = 0.001 - 0.2 A
IRSM Non-repetitive peak reverse tp = 100 μs - 0.2 A
current
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
1. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ a
tab
��� Semiconductors �Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
th j-mb Thermal resistance junction to - - 2 K/W
mounting base
Rth j-a Thermal resistance junction to in free air - 60 - K/Wambient
STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Forward voltage IF = 14 A; Tj = 150˚C - 0.83 0.90 V
IF = 14 A - 0.95 1.05 V
IF = 50 A - 1.2 1.4 V Reverse current VR = VRWM; Tj = 100 ˚C - 0.5 1.3 mA
VR = VRWM -5 50 μA Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs- 6 15 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 30 ns
-dIF/dt = 100 A/μs
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 13 22 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs- 1 - V
��� Semiconductors �Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfr
Fig.4. Definition of trr2
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.s 100%10%
timeRFrrmrr
I = 1AR
recI = 0.25A
trr2
0.5A
time
timeFfrFF 5 10 15 20 250
IF(AV) / A
PF / W
Tmb(max) / C
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source 15
PF / W Tmb(max) / C
150
��� Semiconductors �Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C.
Fig.8. Maximum Irrm at Tj = 25 ˚C.
Fig.10. Maximum Qs at Tj = 25 ˚C.
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
trr / ns 10 100
dIF/dt (A/us)
Qs / nC
1.0 10 100
-dIF/dt (A/us)
Irrm / A 10 100
-dIF/dt (A/us)
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
60
50
40
30
20
10
IF / A
��� Semiconductors �Product specification
Rectifier diodes
BYV79E series
ultrafast, rugged
MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g
Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes

1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8max
1,3
0,9 max (2x)
13,5
min
5,08
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