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BYV40E150-BYV40E-150
Dual ultrafast power diode
NXP Semiconductors Product specification
Rectifier diodes BYV40E series
ultrafast, rugged
FEATURES• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
GENERAL DESCRIPTIONDual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for useas output rectifiersin high
frequency switched mode power
supplies. tab cathode
CONDITIONS MIN. MAX. UNIT
BYV40E -150 -200 - 150 200 V - 150 200 V Tsp ≤ 120˚C - 150 200 V square wave; δ = 0.5; - 1.5 A1 Tsp ≤ 132˚C t = 25 μs; δ = 0.5; - 1.5 A Tsp ≤ 132 ˚C tp = 10 ms - 6 A tp = 8.3 ms - 6.6 A
sinusoidal; Tj = 150˚C prior
to surge; with reapplied
VRWM(max) tp = 2 μs; δ = 0.001 - 0.1 A tp = 100 μs - 0.1 A -65 150 ˚C - 150 ˚C
23
NXP Semiconductors Product specification
Rectifier diodes BYV40E series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-sp Thermal resistance one or both diodes conducting - - 15 K/W
junction to solder point
Rth j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:11 - 70 - K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 0.5 A; Tj = 150˚C - 0.50 0.7 V
IF = 1.5 A - 0.82 1.0 VIR Reverse current VR = V RWM; Tj = 100 ˚C - 100 300 μA
VR = VRWM -5 10 μA Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs- - 11 nCtrr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - - 25 ns
-dIF/dt = 100 A/μs
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 10 20 nsVfr Forward recovery voltage IF = 2 A; dIF /dt = 20 A/μs- 3 - V
NXP Semiconductors Product specification
Rectifier diodes BYV40E series
ultrafast, rugged
Fig.1. Definition of trr1, Qs and Irrm
Fig.2. Definition of Vfrs
timeRFrrmrr
recI = 0.25A
0.5AFF
shunt
Current
D.U.T.
Voltage Pulse Source 0.5 0.6 0.7 0.8
a = 1.57
2.8 Tsp(max) / C
139.5
NXP Semiconductors Product specification
Rectifier diodes BYV40E series
ultrafast, rugged
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Fig.9. Maximum Qs at Tj = 25 ˚C; per diode
trr / ns
110 100
IF = 2A
dIF/dt (A/us)
Qs / nC
IF=2A
IF=1A
IF / A
Tj=25C
M
