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BYV34X-600
Dual ultrafast power diode
Product profile1.1 General descriptionUltrafast, dual common cathode, epitaxial rectifier diodeina SOT186A (TO-220F)) plastic
package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
BYV34X-600
Dual rectifier diode ultrafast
Rev. 01 — 13 September 2007 Product data sheet Fast switching n Low thermal resistance Soft recovery characteristics n Isolated package Low forward voltage drop n High thermal cycling performance Output rectifiers in high frequency
switched-mode power supplies Discontinuous Current Mode (DCM)
Power Factor Correction (PFC) VRRM≤ 600V n IO(AV)≤20A VF≤ 1.16V n trr≤60ns
Table 1. Pinning anode 1
SOT186A (3-lead TO-220F) cathode anode 2 mounting base; isolated21
sym0841
NXP Semiconductors BYV34X-600
Dual rectifier diode ultrafast Ordering information Limiting values
Table 2. Ordering informationBYV34X-600 TO-220F plastic single-ended package; isolated heatsink mounted;1 mounting hole;
3-lead TO-220 ‘full pack’
SOT186A
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V reverse voltage square waveform;δ= 1.0; Th≤ 100°C - 600 V
IO(AV) average output current square waveform;δ= 0.5; Th≤44 °C; both
diodes conducting
-20 A
IFRM repetitive peak forward currentt=25 μs; square waveform;δ= 0.5;≤44 °C; per diode
-20 A
IFSM non-repetitive peak forward
current=10 ms; sinusoidal waveform; per diode - 120 A= 8.3 ms; sinusoidal waveform; per diode - 132 A
Tstg storage temperature −40 +150 °C junction temperature - 150 °C
NXP Semiconductors BYV34X-600
Dual rectifier diode ultrafast Thermal characteristics Isolation characteristics
Table 4. Thermal characteristicsRth(j-h) thermal resistance from junction to
heatsink
with heatsink compound;
per diode; see Figure1 - 5.0 K/W
with heatsink compound;
both diodes conducting - 4.0 K/W
without heatsink compound;
per diode - 7.0 K/W
Rth(j-a) thermal resistance from junction to
ambient
in free air - 55 - K/W
Table 5. Isolation limiting values and characteristicsTh = 25 °C unless otherwise specified.
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;=50 Hz to 60 Hz; sinusoidal waveform;
relative humidity≤65 %; clean and dust free - 2500 V
Cisol isolation capacitance from cathode to external heatsink; f=1 MHz - 10 - pF
NXP Semiconductors BYV34X-600
Dual rectifier diode ultrafast Characteristics
Table 6. CharacteristicsTj = 25 °C unless otherwise specified.
Static characteristics forward voltage IF=10 A; Tj= 150 °C; see Figure2 - 0.92 1.16 V=10 A; see Figure2 - 1.07 1.36 V reverse current VR= 600V - 10 50 μA= 600 V; Tj= 100°C - 0.2 0.6 mA
Dynamic characteristics recovered charge IF=2 A to VR≥30 V; dIF/dt=20A/μs;
see Figure3 4070nC
trr reverse recovery time IF =1AtoVR≥30V; dIF/dt= 100 A/μs;
see Figure3 5060ns
IRM peak reverserecovery
current=10AtoVR≥30V; dIF/dt=50A/μs;= 100 °C; see Figure3 35A
VFR forward recovery
voltage=10 A; dIF/dt=10A/μs; see Figure4 - 3.2 - V
NXP Semiconductors BYV34X-600
Dual rectifier diode ultrafast
NXP Semiconductors BYV34X-600
Dual rectifier diode ultrafast Package outline
Fig 7. Package outline SOT186A (3-lead TO-220F)
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack' SOT186A
