BYV34-500 ,Dual ultrafast power diodesFeatures and benefits Fast switching Low switching loss High thermal cycling performance Low th ..
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BYV34-400-BYV34-500
Dual ultrafast power diode
Product profile1.1 General descriptionDual ultrafast power diodes in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits Fast switching High thermal cycling performance Low forward voltage drop Low switching loss Low thermal resistance Soft recovery characteristic
1.3 Applications Discontinuous Current Mode (DCM)
Power Factor Correction (PFC) Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
BYV34-500
Dual ultrafast power diodes
Rev. 4 — 20 March 2012 Product data sheet
Table 1. Quick reference dataVRRM repetitive peak reverse voltage - - 500 V
IO(AV) average output current square-wave pulse; δ =0.5;
Tmb≤ 115 °C; both diodes conducting;
see Figure 1; see Figure 2
--20 A
Static characteristics forward voltage IF =10A; Tj= 150 °C; see Figure 4 - 0.87 1.05 V
Dynamic characteristicstrr reverse recovery time IF =1A; VR =30V; dIF/dt= 100 A/s; =25°C; see Figure 6; see Figure 7 5060ns
NXP Semiconductors BYV34-500
Dual ultrafast power diodes Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationBYV34-500 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse voltage - 500 V
VRWM crest working reverse voltage - 500 V reverse voltage Tmb≤ 138 °C; DC - 500 V
IO(AV) average output current square-wave pulse; δ= 0.5 ; Tmb≤ 115 °C;
both diodes conducting; see Figure 1;
see Figure 2
-20 A
IFRM repetitive peak forward current square-wave pulse; δ =0.5; tp=25 µs;
Tmb≤ 115 °C; per diode
-20 A
IFSM non-repetitive peak forward current tp=10 ms; sine-wave pulse; Tj(init) =25 °C;
per diode 120 A= 8.3 ms; sine-wave pulse;
Tj(init)=25 °C; per diode 132 A
Tstg storage temperature -40 150 °C junction temperature - 150 °C
NXP Semiconductors BYV34-500
Dual ultrafast power diodes
NXP Semiconductors BYV34-500
Dual ultrafast power diodes Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction
to mounting base
with heatsink compound; per diode;
see Figure 3
--2.4 K/W
with heatsink compound; both diodes
conducting
--1.6 K/W
Rth(j-a) thermal resistance from junction
to ambient
in free air - 60 - K/W
NXP Semiconductors BYV34-500
Dual ultrafast power diodes Characteristics
Table 6. Characteristics
Static characteristics forward voltage IF =20A; Tj=25 °C; see Figure 4 - 1.1 1.35 V =10A; Tj =150 °C; see Figure 4 - 0.87 1.05 V reverse current VR =500 V; Tj=25°C - 10 50 µA =500 V; Tj= 100°C - 0.2 0.6 mA
Dynamic characteristics recovered charge IF =2A; VR =30V; dIF/dt=20 A/s; =25°C; see Figure 5; see Figure 6 5060nC
trr reverse recovery time IF =1A; VR =30V; dIF/dt= 100 A/s; =25°C; see Figure 6; see Figure 7 5060ns
IRM peak reverse recovery
current =10A; VR =30V; dIF/dt=50 A/s; = 100 °C; see Figure 6; see Figure 8 45A
VFRM forward recovery voltage IF =10A; dIF/dt=10 A/s; Tj =25 °C;
see Figure 9
-2.5 -V
NXP Semiconductors BYV34-500
Dual ultrafast power diodes
