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Partno	Mfg	Dc	Qty	Available	Descript
BYV29X-500 \|BYV29X500	PHILIPS	N/a	500	avai	Rectifier diodes ultrafast

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BYV29X-500
Rectifier diodes ultrafast
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic VF ≤ 1.03 V
• High thermal cycling performance
• Isolated mounting tab I F(AV) = 9 Arr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for usein switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuitsin general.
The BYV29F seriesis suppliedin the SOD100 package.
The BYV29X seriesis suppliedin the SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION cathode (k) anode (a)
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV29F/BYV29X -300 -400 -500
VRRM Peak repetitive reverse voltage - 300 400 500 V Continuous reverse voltage Ths ≤ 138˚C1 - 300 400 500 V
IF(AV) Average forward current2 square wave; δ = 0.5; - 9 A
Ths ≤ 90 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; with reapplied
VRRM(max)
Tstg Storage temperature -40 150 ˚C Operating junction temperature - 150 ˚C
case
case
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 Vall terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance junction to in free air. - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Forward voltage IF = 8 A; Tj = 150˚C - 0.90 1.03 V
IF = 8 A - 1.05 1.25 V
IF = 20 A - 1.20 1.40 V Reverse current VR = VRRM - 2.0 50 μA
VR = VRRM; Tj = 100 ˚C - 0.1 0.35 mA Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 40 60 nC
dIF/dt = 20 A/μs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 50 60 ns
dIF/dt = 100 A/μs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - 4.0 5.5 A
dIF/dt = 50 A/μs; Tj = 100˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/μs - 2.5 - V
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.1. Definition of trr, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.RF
024 68 100
IF(AV) / A
PF / W Ths(max) / C
time
timeFF
trr / ns
110 100
dIF/dt (A/us) 5 10 150
IF(AV) / A
PF / W
Ths(max) / C
67.5 10
Irrm / A 10 100
-dIF/dt (A/us)
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.8. Maximum Qs at Tj = 25˚C
Fig.9. Transient thermal impedance Zth j-hs= f(tp) 1 2
30
20
10
IF / A
0.5 1.5
VF / V
1us 10us 100us 1ms 10ms 100ms 1s 10s0.001
0.1pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
1000 Qs / nC
1.0 10 100-dIF/dt (A/us)
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.10. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
max
max
max
0.55 max
min
top view
3.5 max
not tinned 4.4
Philips Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
max
seating
plane
max
3 max.
not tinned
max.
min.
Recesses (2x)
0.8 max. depth
1.0 (2x)

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