BYT200PIV400 ,ULTRAFAST POWER RECTIFIER DIODEABSOLUTE MAXIMUM RATINGSymbol Parameter Value UnitV Repetitive peak reverse voltage 400 VRRMI RMS f ..
BYT230PIV1000 ,FAST RECOVERY RECTIFIER DIODESFEATURES AND BENEFITSVERY LOW REVERSE RECOVERY TIMEVERY LOW SWITCHING LOSSESLOW NOISE TURN-OFF SWIT ..
BYT230PIV400 ,FAST RECOVERY RECTIFIER DIODESFEATURES AND BENEFITSn VERY LOW REVERSE RECOVERY TIMEn VERY LOW SWITCHING LOSSESn LOW NOISE TURN-OF ..
BYT230PIV-400 ,FAST RECOVERY RECTIFIER DIODESBYT230PIV-400BYT231PIV-400®FAST RECOVERY RECTIFIER DIODESK2 A2 A2 K1MAIN PRODUCT CHARACTERISTICSI 2 ..
BYT230Y-400 ,FAST RECOVERY RECTIFIER DIODESFEATURES AND BENEFITSVERY LOW REVERSE RECOVERY TIMEVERY LOW SWITCHING LOSSESA2LOW NOISE TURN-OFF SW ..
BYT231PIV400 ,FAST RECOVERY RECTIFIER DIODESFEATURES AND BENEFITSn VERY LOW REVERSE RECOVERY TIMEn VERY LOW SWITCHING LOSSESn LOW NOISE TURN-OF ..
C4408 , 2C 22 SOLID BC PVC NS PVC Sound, Alarm & Security Cable
C4500 , OCXO Surface Mount Package Optional AT-Cut and SC-Cut Crystal Options
C4532X7R1H685M , Commercial Grade ( General (Up to 50V) )
C4532X7R2A225M , LM3402/LM3402HV 0.5A Constant Current Buck Regulator for Driving High Power LEDs
C4545 , Circuit Protection Solutions Low Voltage Fuse Links Catalogue
C4558C ,HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER features higher speed, broader . Output short circuit protection
bandwidth, and lower noise comp ..
BYT200PIV400
ULTRAFAST POWER RECTIFIER DIODE
BYT200PIV-400May 2000- Ed:3C
ULTRAFAST POWER RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE:
2500 VDC
CAPACITANCE 42pF
FEATURES AND BENEFITSHigh current power rectifier diode suited for
Switched Mode Power Supply and high frequencyto DC converters.
Packagedin ISOTOP, this deviceis intended
for useina medium voltage high current ap-
plications such as
welding equipment and
Telecom supplies.
DESCRIPTION
ABSOLUTE MAXIMUM RATINGISOTOPisa trademarkof STMicroelectronics
BYT200PIV-400
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test:*tp=5 ms, duty cycle<2%tp= 380μs, duty cycle<2% evaluate the conduction losses use the following equation:
P=0.8xIF(AV)+ 0.00228xIF2 (RMS)
RECOVERY CHARACTERISTICS
BYT200PIV-400 10 20 30 40 50 60 70 80 90 100 110 120 1300
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak current versus form factor (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig.3: Average forward current versus ambient
temperature(δ= 0.5, per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.4: Non repetitive surge peak forward current
versus overload duration (per diode).
1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig.5: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.501
IFM(A)
Fig.6: Forward voltage drop versus forward current
(maximum values, per diode).
BYT200PIV-400 10 100 200100
C(pF)
Fig.7: Junction capacitance versus reverse voltage
applied (typical values, per diode). 100 200 300 400 5000.0
Qrr(μC)
Fig.8: Recovery charges versus dIF/dt (per diode). 100 200 300 400 5000
IRM(A)
Fig.9: Recoverycurrent versus dIF/dt (per diode). 100 200 300 400 500 600 700 8000
VFP(V)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode). 25 50 75 100 125 1500.00
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
Fig. 11: Dynamic parameters versus junction
temperature.
BYT200PIV-400Informationfurnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rightsof third parties whichmayresult fromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2000 STMicroelectronics- Printedin Italy-All rights reserved.
STMicroelectronics GROUPOF COMPANIES
Australia- Brazil- China- Finland- France- Germany- Hong Kong- India- Italy- Japan- Malaysia
Malta- Morocco- Singapore- Spain- Sweden- Switzerland- United Kingdom- U.S.A.
http://
PACKAGE MECHANICAL DATAISOTOP Epoxy meets UL94, V0
:
www.ic-phoenix.com
.
