BYT08P-400 ,FAST RECOVERY RECTIFIER DIODESBYT08P-400BYT08PI-400®FAST RECOVERY RECTIFIER DIODESMAIN PRODUCT CHARACTERISTICSI 8AF(AV)V 400 VRRM ..
BYT106-1300 ,Fast Recovery Silicon Power RectifierElectrical CharacteristicsT = 25
BYT08P400-BYT08P-400
FAST RECOVERY RECTIFIER DIODES
BYT08P-400
BYT08PI-400May 2002- Ed:4A
FAST RECOVERY RECTIFIER DIODES
This single rectifieris suited for Switch Mode
Power Supplies and other power converters.
This deviceis intendedto free-wheeling functionin
converters and motor control circuits.
DESCRIPTION VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: TO-220AC
Insulation voltage: 2500 VRMS
Capacitance=7pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
MAIN PRODUCT CHARACTERISTICS
BYT08P-400 / BYT08PI-400Pulse test:*tp= 380μs,δ <2%tp=5 ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES evaluate the conduction losses use the following equation:
P=1.1xIF(AV)+ 0.024IF2 (RMS)
RECOVERY CHARACTERISTICS
TURN-OFF SWITCHING CHARACTERISTICS
BYT08P-400 / BYT08PI-400012 3 456789 100
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig.2: Peak current versus form factor. 25 50 75 100 125 1500
IF(av)(A)
Fig.3: Average forward current versus ambient
temperature (δ=0.5).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (insulated TO-220AC).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.4-1: Non repetitive surge peak forward current
versus overload duration (TO-220AC).
BYT08P-400 / BYT08PI-4001E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig. 5: Relative variationof thermal impedance
junctionto case versus pulse duration.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50.1
IFM(A)
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode). 10 100 20010
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode). 20 50 100 2000
Qrr(nC)
Fig. 8: Recovery charges versus dIF/dt (per
diode). 20 50 100 2000
IRM(A)
Fig.9: Recovery current versus dIF/dt (per diode). 100 200 300 400 5000
VFP(V)
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode)
BYT08P-400 / BYT08PI-400 100 200 300 400 5000.00
tfr(μs)
Fig. 11: Forward recovery time versus dIF/dt (per
diode) 25 50 75 100 125 1500.25
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
Fig. 12: Dynamic parameters versus junction
temperature.
Fig. 13: Turn-off switching characteristics (without series inductance).
Fig. 14: Turn-off switching characteristics (with series inductance).
