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BYR29-600 |BYR29600PHN/a4860avaiUltrafast power diode
BYR29-800 |BYR29800PHN/a980avaiUltrafast power diode


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BYR29-600-BYR29-800
Ultrafast power diode

NXP Semiconductors Product specification
Rectifier diodes BYR29 series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 500 V/ 600 V/ 700 V /
• Fast switching 800 V
• Soft recovery characteristic
• Reverse surge capability VF ≤ 1.5 V
• High thermal cycling performance
• Low thermal resistance IF(AV) = 8 A
trr ≤ 75 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)

Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intendedfor useas output rectifiers high frequency switched mode 1 cathode
LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). MIN. MAX. UNIT
BYR29 -500 -600 -700 -800
- 500 600 700 800 V - 500 600 700 800 V - 500 600 700 800 V - 8 A - 16 A - 60 A - 66 A -40 150 ˚C - 150 ˚C MIN. TYP. MAX. UNIT - - 2.5 K/W - 60 - K/W a
tab
NXP Semiconductors Product specification
Rectifier diodes
BYR29 series
ultrafast
ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Forward voltage IF = 8 A; Tj = 150˚C - 1.07 1.50 V
IF = 20 A - 1.75 1.95 V Reverse current VR = VRRM - 1.0 10 μA
VR = VRRM; Tj = 100 ˚C - 0.1 0.2 mA Reverse recovery charge IF = 2 A to VR ≥ 30 V; - 150 200 nC
dIF/dt = 20 A/μs
trr Reverse recovery time IF = 1 A to VR ≥ 30 V; - 60 75 ns
dIF/dt = 100 A/μs
Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - - 6 A
dIF/dt = 50 A/μs; Tj = 100 ˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 10 A/μs - 5.0 -
Fig.1. Definition of trr, Qs and Irrm
Fig.2. Definition of Vfr
Fig.3. Maximum forward dissipation PF = f(IF(AV));
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).s 100%10%
timeRFrrmrr 4680
BYR29
PF / W Tmb(max) / C
Vo = 1.26 V
Rs = 0.03 Ohms
timeFF 123 45 67 80
IF(AV) / A
120
NXP Semiconductors Product specification
Rectifier diodes
BYR29 series
ultrafast
Fig.5. Maximum trr at Tj = 25˚C and 100˚C.
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
trr / ns
110 100
dIF/dt (A/us)
IF=10 A
Tj = 25 C
Tj = 100 C 0.5 1 1.5 2 2.5 30 BYR29
VF / V
IF / A
maxtyp
Tj = 25 C
Tj = 150 C
Irrm / A 10 100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100 C
1000 Qs / nC
IF = 10A 10us 100us 1ms 10ms 100ms 1s 10s
BYV29pulse width, tp (s)
D = tp
NXP Semiconductors Product specification
Rectifier diodes
BYR29 series
ultrafast
MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g
NXP Semiconductors
Legal information
DATA SHEET STATUS
Notes
Please consult the most recently issued document before initiating or completing a design. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://.
DEFINITIONS
Product specification ⎯ The information and data

provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability ⎯ Information in this

document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
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Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
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of an NXP Semiconductors product can reasonably be
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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.
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warranty that such applications will be suitable for the
specified use without further testing or modification.
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their applications and products using NXP
Semiconductors products, and NXP Semiconductors
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Semiconductors product is suitable and fit for the
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