| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BUZ80AF |
SIEMENS |
N/a |
100 |
 |
|
BUZ80FI ,NBUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V < 4 Ω ..
BUZ81 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ90A ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max.
C30T04QH , Schottky Barrier Diode
C30T04QH , Schottky Barrier Diode
C30T04QH-11A , Schottky Barrier Diode
