| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BUZ171S2 |
SIEMENS |
N/a |
50 |
 |
|
BUZ172 ,SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)CharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
BUZ173 ,P-Channel SIPMOS Power Transistor BUZ 173® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 ..
BUZ20 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 20® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 ..
BUZ21 ,19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFETFeaturesMOSFET• 19A, 100V[ /TitleThis is an N-Channel enhancement mode silicon gate power = 0.100Ω• ..
BUZ21L ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 100 - -GS ..
C2Q1.25 , Surface Mount Very Fast-Acting Chip Fuse
C3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta=25°C unitI Co11eceoP-to-Batse Voltage %so 500 VCollector-eo-Emote: V ..
C3068 , TYPE CMP / CL3P
