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BUZ110SLINFIEONN/a1062avaiSIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
BUZ110SLE3045AinfineonN/a4068avaiN-Channel SIPMOS Power Transistor


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BUZ110SL-BUZ110SLE3045A
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor BUZ 110$L
Features Product Summary
. N channel Drain source voltage Vros 55 V
. Enhancement mode Drain-Source on-state resistance RDSW) 0.01 n
. Avalanche rated Continuous drain current h, 80 A
q Logic Level
q d v/dt rated
0 175°C operating temperature
VPT05164
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
BUZ11OSL P-TO220-3-1 Q67040-S4004-A2 Tube G D S
BUZ11OSL E3045A P-TO263-3-2 Q67040-S4004-A6 Tape and Reel
BUZ11OSL E3045 P-T0263-3-2 Q67040-S4004-A5 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ''C 80
TC = 100 ( 59
Pulsed drain current IDpuIse 320
TC = 25 °C
Avalanche energy, single pulse EAS 460 mJ
ID = 80A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 20
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 80 A, VDS = 40 V, di/dt= 200 Alps,
ijax = 175 "C
Gate source voltage VGS :20 V
Power dissipation Ptot 200 W
TC = 25 ''C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon BUZ110SL
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.75 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 4O
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS Vegan) 1.2 1.6 2
ID = 200 pA
Zero gate voltage drain current IDSS pA
VDS=50V,VGS=0V,TJ-=25°C - 0.1 1
VDs=50V,VGs=OV, Tj=150°C - - 100
Gate-source leakage current less - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(0n) n
VGs = 4.5 V, b = 59 A - 0.012 0.015
VGS = 10 V, ID = 59 A - 0.0075 0.01
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
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