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BUZ110SINFINEONN/a100avaiN-Channel SIPMOS Power Transistor
BUZ110SSIEMENSN/a150avaiN-Channel SIPMOS Power Transistor


BUZ110S ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.01R Ω• Enhancemen ..
BUZ110S ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS DGate thresho ..
BUZ110SL ,SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.01R Ω• Enhancemen ..
BUZ110SLE3045A ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D1.2 1.6 2Gat ..
BUZ111S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)CharacteristicsThermal resistance, junction - case - - 0.5 K/WRthJC Thermal resistance, junction - ..
BUZ111S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.008R Ω• Enhancem ..
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BUZ110S
N-Channel SIPMOS Power Transistor
technologles “mpwo
SIPMOS@ Power Transistor
Features Product Summary
. N channel Drain source voltage VDS 55 V
. Enhancement mode Drain-Source on-state resistance RDS(On) 0.01 f2
. Avalanche rated Continuous drain current ID 80 A
. dv/dt rated
q 175 ( operating temperature
1'. r.
VPT051 64
VPT05155
Type Package Ordering Code Packaging Pin1 Pin 2 Pin 3
BUZ11OS P-TO220-3-1 Q67040-S4005-A2 Tube G D S
BUZ11OS E3045A P-T0263-3-2 Q67040-S4005-A6 Tape and Reel
BUZ11OS E3045 P-TO263-3-2 Q67040-S4005-A5 Tube
Maximum Ratings, at Ti = 25 ( unless otherwise specified
Parameter . Symbol Value Unit
Continuous drain current /D A
TC = 25 ''C, limited by bond wire 80
TC = 100°C 66
Pulsed drain current IDpuIse 320
To = 25 (
Avalanche energy, single pulse EAS 460 mJ
ID =80A, VDD=25V, RGS=25£2
Avalanche energy, periodic limited by Timax EAR 20
Reverse diode dv/dt dv/dt 6 kV/ws
ls = 80 A, VDS = 40 V, di/dt= 200 A/ps,
Timax = 175 (
Gate source voltage VGS :20 V
Power dissipation Ptot 200 W
TC = 25 (
Operating and storage temperature Ti, Tsta -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Book
(Cl,':!:,!,,:,,,,::!,,:,,::,,,,,., BUZ 110S
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case Hthuc - - 0.75 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ho = 0.25 mA
Gate threshold voltage, VGS = VDS VGSW 2.1 3 4
ID = 200 HA
Zero gate voltage drain current IDSS pA
1hos=501/,1/Gs=01/,rj=25''c - 0.1 1
VDS=50V, 1/'ss=0V,Tj=150''C - - 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=0V
Drain-Source on-state resistance RDS(on) Q
VGS = 10 V, ID = 66 A - 0.009 0.01
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book 2
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