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BUZ101SLSIEMENSN/a80000avaiN-Channel SIPMOS Power Transistor
BUZ101SLINFINEONN/a410avaiN-Channel SIPMOS Power Transistor


BUZ101SL ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 55 VVDS• N channelDrain-Source on-state resistance 0.04R Ω• Enhancemen ..
BUZ101SL ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D1.2 1.6 2Gat ..
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BUZ101SL
N-Channel SIPMOS Power Transistor
( Infineon
technologies
SIPMOS® Power Transistor BUZ 101SL
Features Product Summary
. N channel Drain source voltage VDS 55 V
. Enhancement mode
Drain-Source on-state resistance
RDS(on) 0.04 n
. Avalanche rated
Continuous drain current
q Logic Level
q dv/dt rated
q 175°C operating temperature
VPT05155
Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3
BUZ101SL P-TO220-3-1 Q67040-S4012-A2 Tube G D S
BUZ101SL E3045A P-TO263-3-2 Q67040-S4012-A6 Tape and Reel
BUZ101SL E3045 P-T0263-3-2 Q67040-S4012-A5 Tube
Maximum Ratings, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ''C 20
TC = 100 ( 14
Pulsed drain current IDpuIse 80
TC = 25 (
Avalanche energy, single pulse EAS 90 mJ
ID =20A, VDD=25V, RGS=25Q
Avalanche energy, periodic limited by Timax EAR 5.5
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 20 A, bbs = 40 V, di/dt= 200 Alps,
ijax = 175 (
Gate source voltage VGS :20 V
Power dissipation Ptot 55 W
TC = 25 ''C
Operating and storage temperature Ti, Tstq -55... +175 (
IEC climatic category; DIN IEC 68-1 55/175/56
Data Sheet
Infineon BUZ101SL
technologies/
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 2.7 KNV
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling areal) - - 40
Electrical Characteristics, at Ti = 25 "C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage 1/(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = bbs VGS(th) 1.2 1.6 2
ID = 40 pA
Zero gate voltage drain current IDSS pA
VDS=50V,VGS=0V,TJ-=25°C - 0.1 1
bbs=50V,bt'ss=0V, Tj=150°C - - 100
Gate-source leakage current less - 10 100 nA
VGS=20V, bbs=OV'
Drain-Source on-state resistance RDS(On) Q
VGS = 4.5 V, b = 14 A - 0.057 0.07
VGS = 10 V, ID = 14 A - 0.034 0.04
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet 2 05.99
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