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Partno	Mfg	Dc	Qty	Available	Descript
BUP200	Infineon	N/a	30	avai	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

BUP200 ,IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)BUP 200IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP212 ,IGBT TransistorBUP 212IGBT• Low forward voltage drop• High switching speed• Low tail current • Latch-up free• Aval ..
BUP303 ,IGBT TransistorBUP 303IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP304 ,IGBT TransistorBUP 304IGBTPreliminary data• Low forward voltage drop• High switching speed• Low tail current • Lat ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetBUP 311DInfineonIGBT With Antiparallel DiodePreliminary data sheet• Low forward voltage drop High ..
BUP311D ,IGBT With Antiparallel Diode Preliminary data sheetCharacteristicsGate threshold voltage V VGE(th)V = V I = 0.3 mA, T = 25 °C 4.5 5.5 6.5GE CE, C jCol ..
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2625 , 700/800 WATTS (AC) DC/D CSINGLE OUTPUT

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BUP200
IGBT Transistor
BUP 200
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Maximum Ratings
BUP 200
Maximum Ratings
Thermal Resistance
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
AC Characteristics
BUP 200
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Switching Characteristics, Inductive Load at Tj = 125 °C
BUP 200
Power dissipation tot = ƒ(TC)
parameter: Tj ≤ 150 °C20406080100120°C160C
10
15
20
25
30
35
40
45
55 tot
Collector current C = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C20406080100120°C160C
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.6 C
Safe operating area C = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
-2 10
-1 10 10 10
A C0 1 2 3
Transient thermal impedance IGBTth JC = ƒ(tp)
parameter: D = tp / T
-2 10
-1 10 10 10
K/W thJC-5 -4 -3 -2 -1 0
BUP 200
Typ. output characteristics
Typ. transfer characteristics
BUP 200
Typ. gate charge GE = ƒ(QGate)
parameter: IC puls = 1 A4812162024nC32Gate
10
12
14
16
20 GE
Typ. capacitances

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