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Partno	Mfg	Dc	Qty	Available	Descript
BUL382D	ST	N/a	150	avai	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUL382D ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE = 0) 800 VV ..
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C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A

BUL382D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
BUL381
BUL382
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLE OPERATION VERYHIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC
APPLICATIONS ELECTRONIC BALLASTSFOR
FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL381 and BUL382 manufactured using
high voltage Multiepitaxial Mesa technology for
cost-effective high performance. They usea
Hollow Emitter structure to enhance switching
speeds.
The BUL seriesis designed for usein lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE=0) 800 V
VCEO Collector-Emitter Voltage(IB=0) 400 V
VEBO Emitter-Base Voltage(IC =0) 9 V Collector Current 5 A
ICM Collector Peak Current(tp <5 ms) 8 A Base Current 2 A
IBM Base Peak Current(tp <5 ms) 4 A
Ptot Total DissipationatTc =25o C70 W
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC23
TO-220
1/7
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =800V
VCE =800V Tj =125oC
ICEO Collector Cut-off
Current(IB =0)
VCE =400V 250 μA
VCEO(sus) Collector-Emitter
Sustaining Voltage= 100 mAL=25 mH 400 V
VEBO Emitter-Base Voltage
(IC =0) =10 mA 9 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =1A IB =0.2A =2A IB =0.4A =3A IB =0.8A
VBE(sat)∗ Base-Emitter
Saturation Voltage =1A IB =0.2A =2A IB =0.4A
hFE∗ DC Current Gain IC =2A VCE =5V =10 mA VCE =5V
tON
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC =250V IC =2A
IB1 =0.4A IB2 =-0.4A
(for BUL381only) =30μs
tON
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC =250V IC =2A
IB1 =0.4A IB2 =-0.4A
(for BUL382 only) =30μs
INDUCTIVE LOAD
Storage Time
Fall Time =2A VCL= 250V
IB1 =0.4A IB2 =-0.8A= 200 μH
INDUCTIVE LOAD
Storage Time
Fall Time =2A VCL= 250V
IB1 =0.4A IB2 =-0.8A= 200 μHTj= 125oC
∗ Pulsed: Pulse duration=300μs, duty cycle1.5%
BUL381/ BUL382
2/7
Safe Operating Areas Current Gain
Collector Emitter Saturation Voltage
Derating Curves Current Gain
Base Emitter Saturation Voltage
BUL381/ BUL382
3/7
Reverse Biased SOA InductiveFall Time
InductiveStorage Time InductiveFall Time
InductiveStorage Time Resistive Load Switching Test Ciurcuit Fast electronic switch Non-inductive Resistor
BUL381/ BUL382
4/7
Fast electronic switch Non-inductive Resistor Fast recovery RectifierReverse BSOA and Inductive Load Switching
Test Ciurcuit
BUL381/ BUL382
5/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 1.27 0.050 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.067 1.14 1.70 0.044 0.067 4.95 5.15 0.194 0.203 2.4 2.7 0.094 0.106 10.0 10.40 0.393 0.409 16.4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
BUL381/ BUL382
6/7

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