BUK9635-55A ,N-channel TrenchMOS logic level FETApplications Automotive and general purpose power switching1.4 Quick reference data Table 1. Quick ..
BUK963R2-40B ,TrenchMOS(TM) logic level FETApplications■ Automotive systems ■ 12 V loads■ Motors, lamps and solenoids ■ General purpose power ..
BUK9640-100A ,TrenchMOS(tm) logic level FETApplications■ Automotive and general purpose power switching:◆ 12 V, 24 V, and 42 V loads◆ Motors, ..
BUK964R2-55B ,N-channel TrenchMOS logic level FETApplications 12 V and 24 V loads General purpose power switching Automotive systems Motors, lam ..
BUK964R4-40B ,N-channel TrenchMOS logic level FETApplications■ Automotive systems ■ 12 V loads■ Motors, lamps and solenoids ■ General purpose power ..
BUK9660-100A ,N-channel TrenchMOS logic level FET
C25-28A , COMMUNICATION CABLE
C25P20FR , LOW FORWARD VOLTAGE DROP
C25P40FR , LOW FORWARD VOLTAGE DROP
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
C2611 , Collector-emitter Voltage: V(BR)CEO=400V, Collector Current: IC=0.2A
BUK9635-55A
N-channel TrenchMOS logic level FET
Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low
on-state resistance
1.3 Applications Automotive and general purpose
power switching
1.4 Quick reference data
BUK9635-55A
N-channel TrenchMOS logic level FET
Rev. 2 — 21 April 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 55 V drain current Tmb =25°C - - 34 A
Ptot total power dissipation - - 85 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =25A; =25°C
-24 32 mΩ
VGS =5V; ID =25A; =25°C
-26 35 mΩ
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =14A; Vsup≤25V; RGS =50 Ω; VGS =5V;
Tj(init) =25°C;
unclamped 49 mJ
NXP Semiconductors BUK9635-55A
N-channel TrenchMOS logic level FET Pinning information Ordering information Limiting values
Table 2. Pinning information G gate
SOT404 (D2PAK) D drain source D mounting base;
connected to drain
Table 3. Ordering informationBUK9635-55A D2PAK plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -10 10 V drain current Tmb =100°C - 24 A
Tmb =25°C - 34 A
IDM peak drain current Tmb=25 °C; pulsed - 133 A
Ptot total power dissipation Tmb =25°C - 85 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
VGSM peak gate-source voltage pulsed; tp≤50µs -15 15 V
Source-drain diode source current Tmb =25°C - 34 A
ISM peak source current pulsed; Tmb=25°C - 133 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy =14A; Vsup≤25 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped
-49 mJ
NXP Semiconductors BUK9635-55A
N-channel TrenchMOS logic level FETNXP Semiconductors BUK9635-55A
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting base
--1.8 K/W
Rth(j-a) thermal resistance from
junction to ambient
minimum footprint; FR4 board - 50 - K/W
NXP Semiconductors BUK9635-55A
N-channel TrenchMOS logic level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =0.25mA; VGS =0mV; Tj=25°C 55 --V =0.25mA; VGS =0mV; Tj= -55°C 50 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= -55°C --2.3 V =1mA; VDS =VGS; Tj =25°C 1 1.5 2 V =1mA; VDS =VGS; Tj= 175°C 0.5 - - V
IDSS drain leakage current VDS =55V; VGS =0V; Tj=25°C - 0.05 10 µA
VDS =55V; VGS =0V; Tj= 175°C - - 500 µA
IGSS gate leakage current VGS =10V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-10 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =25A; Tj=25°C - 26.5 38 mΩ
VGS =10V; ID =25A; Tj=25°C - 24 32 mΩ
VGS =5V; ID =25A; Tj= 175°C - - 70 mΩ
VGS =5V; ID =25A; Tj=25°C - 26 35 mΩ
Dynamic characteristicsCiss input capacitance VGS =0V; VDS =25V; f=1MHz; =25°C 880 1173 pF
Coss output capacitance - 165 198 pF
Crss reverse transfer
capacitance 111 152 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C 69ns rise time - 36 55 ns
td(off) turn-off delay time - 96 134 ns fall time - 73 102 ns internal drain
inductance
from upper edge of drain mounting
base to centre of die; Tj =25°C
-2.5 -nH
from drain lead 6 mm from package to
centre of die; Tj =25°C
-4.5 -nH internal source
inductance
from source lead to source bond pad; =25°C
-7.5 -nH
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj=25°C - 0.85 1.2 V =34A; VGS =0V; Tj =25°C - 1.1 - V
trr reverse recovery time IS =34A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30 V; Tj =25°C
-36 - ns recovered charge - 0.07 - µC
NXP Semiconductors BUK9635-55A
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9635-55A
N-channel TrenchMOS logic level FET
