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BUK9277-55A |BUK927755ANXPN/a34186avaiN-channel TrenchMOS logic level FET


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BUK9277-55A
N-channel TrenchMOS logic level FET
Product profile1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits Q101 compliant Suitable for logic level gate drive
sources Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications 12 V and 24 V loads Automotive and general purpose
power switching Motors, lamps and solenoids
1.4 Quick reference data
BUK9277-55A
N-channel TrenchMOS logic level FET
Rev. 3 — 17 May 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source
voltage≥25 °C; Tj≤ 175°C - - 55 V drain current VGS =5V; Tmb =25°C;
see Figure 1; see Figure 4
--18 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --51 W
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; ID =10 A; Tj=25°C - 59 69 mΩ
VGS= 4.5 V; ID =10A; Tj=25°C --86 mΩ
VGS =5V; ID =10 A; Tj =25°C;
see Figure 13 6577mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source avalanche energy =18 A; Vsup≤55V;
RGS =50 Ω; VGS =5V; Tj(init)=25 °C; unclamped
--33 mJ
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET Pinning information Ordering information
Table 2. Pinning information G gate
SOT428 (DPAK) D drain source D mounting base; connected to drain
Table 3. Ordering information
BUK9277-55A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET Limiting values
[1] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 55 V
VDGR drain-gate voltage RGS =20kΩ -55 V
VGS gate-source voltage -15 15 V drain current Tmb =25°C; VGS =5V; see Figure 1;
see Figure 4
-18 A
Tmb =100 °C; VGS =5V; see Figure 1 -13 A
IDM peak drain current Tmb=25 °C; pulsed; tp≤10 µs;
see Figure 4
-73 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -51 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C - 18 A
ISM peak source current pulsed; tp≤10 µs; Tmb =25°C - 73 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy =18A; Vsup≤55 V; RGS =50Ω;
VGS =5V; Tj(init)=25 °C; unclamped
-33 mJ
EDS(AL)R repetitive drain-source
avalanche energy
see Figure 3 [1][2][3][4] --J
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting
base
--2.93 K/W
Rth(j-a) thermal resistance from junction to ambient see Figure 5 - 71.4 - K/W
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET Characteristics
Table 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage =0.25mA; VGS =0V; Tj=25°C 55 --V =0.25mA; VGS =0V; Tj= -55°C 50 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 12
--2.3 V =1mA; VDS =VGS; Tj =25°C;
see Figure 12
11.5 2V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 12
0.5 --V
IDSS drain leakage current VDS =55V; VGS =0V; Tj= 175°C - - 500 µA
VDS =55V; VGS =0V; Tj=25°C - 0.05 10 µA
IGSS gate leakage current VGS =15 V; VDS =0V; Tj=25°C - 2 100 nA
VGS =-15 V; VDS =0V; Tj=25°C - 2 100 nA
RDSon drain-source on-state
resistance
VGS =10 V; ID =10A; Tj=25°C - 59 69 mΩ
VGS= 4.5 V; ID =10A; Tj=25°C --86 mΩ
VGS =5 V; ID =10A; Tj =175 °C;
see Figure 13 - 154 mΩ
VGS =5 V; ID =10A; Tj =25°C;
see Figure 13 6577mΩ
Dynamic characteristics
QG(tot) total gate charge ID =10A; VDS =44V; VGS =5V;
see Figure 14
-11 - nC
QGS gate-source charge - 1.6 - nC
QGD gate-drain charge - 5 - nC
Ciss input capacitance VGS =0 V; VDS =25V; f=1MHz; =25°C; see Figure 15 440 643 pF
Coss output capacitance - 90 110 pF
Crss reverse transfer capacitance - 60 93 pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =5V;
RG(ext) =10 Ω; Tj =25°C
-10 - ns rise time - 47 - ns
td(off) turn-off delay time - 28 - ns fall time - 33 - ns internal drain inductance meausured from drain lead from
package to centre of die ; Tj =25°C
-2.5 -nH internal source inductance measured from source lead from
package to source bond pad; =25°C
-7.5 -nH
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj =25 °C;
see Figure 16 0.85 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs;
VGS =-10 V; VDS =30V; Tj =25°C
-33 - ns recovered charge - 60 - nC
NXP Semiconductors BUK9277-55A
N-channel TrenchMOS logic level FET
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